Defect level vs. yield and fault coverage in the presence of an unreliable BISTNAKAMURA, Yoshiyuki; SAVIR, Jacob; FUJIWARA, Hideo et al.IEICE transactions on information and systems. 2005, Vol 88, Num 6, pp 1210-1216, issn 0916-8532, 7 p.Article

Effect of BIST pretest on IC defect levelNAKAMURA, Yoshiyuki; SAVIR, Jacob; FUJIWARA, Hideo et al.IEICE transactions on information and systems. 2006, Vol 89, Num 10, pp 2626-2636, issn 0916-8532, 11 p.Article

Optimal basis sets for deep levels. II: Defect-molecule approximationKANE, E. O.Physical review. B, Condensed matter. 1985, Vol 32, Num 4, pp 2260-2265, issn 0163-1829Article

Influence of ultrasonication times on the tunable colour emission of ZnO nanophosphors for lighting applicationsKUMAR, Vinod; SWART, H. C; GOHAIN, Mukut et al.Ultrasonics sonochemistry. 2014, Vol 21, Num 4, pp 1549-1556, issn 1350-4177, 8 p.Article

An inadvertent mid-gap electron level in liquid-phase-epitaxial GaPZAFAR IQBAL, M; JABBAR, A; BABER, N et al.Physica status solidi. A. Applied research. 1987, Vol 99, Num 1, pp K65-K68, issn 0031-8965Article

Limiting efficiency for solar cells with defects from a three-level modelWÜRFEL, P.Solar energy materials and solar cells. 1993, Vol 29, Num 4, pp 403-413, issn 0927-0248Article

Defects, Overlay and Focus Performance Improvements with Five Generations of Immersion Exposure SystemsMULKENS, Jan; STREEFKERK, Bob; JASPER, Hans et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 652005.1-652005.11, issn 0277-786X, isbn 978-0-8194-6639-6Conference Paper

Etats localisés dans les conditions d'un désordre structuralGINZBURG, L. P.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 9, pp 1629-1634, issn 0015-3222Article

Defect performance of a 2X node resist with a revolutionary point-of-use filterBRAGGIN, J; RAMIREZ, R; WU, A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7639, issn 0277-786X, isbn 978-0-8194-8053-8 0-8194-8053-3, 76391E.1-76391E.8, 2Conference Paper

Risks associated with faults within test pattern compactors and their implications on testingMETRA, C; MAK, T. M; OMANA, M et al.International Test Conference. 2004, pp 1223-1231, isbn 0-7803-8580-2, 1Vol, 9 p.Conference Paper

Proposal of the new thermally stimulated current curve having a straight line passing through the originMAETA, S; SUZUKI, H.Japanese journal of applied physics. 1991, Vol 30, Num 11A, pp 2974-2981, issn 0021-4922, 1Article

Electrical and paramagnetic properties of thermodonors-II in silicon: discussion of a modelBABICH, V. M; BARAN, N. P; BUGAI, A. A et al.Physica status solidi. A. Applied research. 1988, Vol 109, Num 2, pp 537-547, issn 0031-8965Article

Optimal basis sets for deep levels. I: Potential representations and chemical trendsKANE, E. O.Physical review. B, Condensed matter. 1985, Vol 32, Num 4, pp 2254-2259, issn 0163-1829Article

Optimization and preservation of deep-level transient spectroscopy signal responseTHOMAS, H.Journal of applied physics. 1985, Vol 57, Num 10, pp 4619-4622, issn 0021-8979Article

Defect calculations in semiconductors theoretical principles as illustrated by current calculationsSTONEHAM, A. M.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1985, Vol 51, Num 2, pp 161-176, issn 0141-8637Article

Tetrahedral-site VS hexagonal-site self-interstitial in siliconBOGUSLAWSKI, P; PAPP, G; BALDERESCHI, A et al.Solid state communications. 1984, Vol 52, Num 2, pp 155-158, issn 0038-1098Article

A SELF-CONSISTENT MODEL FOR THE OPTICAL EXCITATIONS OF THE U₂ AND U₁ CENTERS IN ALKALI-HALIDESKOILLER B; BRANDI HS.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 94; NO 2; PP. K179-K183; BIBL. 6 REF.Article

Evidence for interfacial defects in metal-insulator-InP structures induced by the insulator depositionSAUTREUIL, B; VIKTOROVITCH, P; BLANCHET, R et al.Journal of applied physics. 1985, Vol 57, Num 6, pp 2322-2324, issn 0021-8979Article

Comparison of an extended interstitial with a split interstitial in siliconWESSER, K; SAHU, S. N; KARINS, J. P et al.Physica status solidi. B. Basic research. 1984, Vol 126, Num 1, pp 157-161, issn 0370-1972Article

Ensuring a High Quality Digital Device through Design for TestabilityUMERAH NGENE, Christopher.CIT. Journal of computing and information technology. 2012, Vol 20, Num 4, pp 235-246, issn 1330-1136, 12 p.Article

Defect energy levels of the As-As dimer at InGaAs/oxide interfaces: A first principles studyMICELI, Giacomo; PASQUARELLO, Alfredo.Microelectronic engineering. 2013, Vol 109, pp 60-63, issn 0167-9317, 4 p.Article

Defect level signatures in CuInSe₂ by photocurrent and capacitance spectroscopyKRYSZTOPA, A; IGALSON, M; GÜTAY, L et al.Thin solid films. 2013, Vol 535, pp 366-370, issn 0040-6090, 5 p.Conference Paper

Comment on atomic model for the EL2 defect in GaAsMANASREH, M. O.Physical review. B, Condensed matter. 1988, Vol 37, Num 5, pp 2722-2723, issn 0163-1829Article

Neutron-induced trapping levels in aluminum gallium arsenideBARNES, C. E; ZIPPERIAN, T. E; DAWSON, L. R et al.Journal of electronic materials. 1985, Vol 14, Num 2, pp 95-118, issn 0361-5235Article

Distorsion de la structure électronique des complexes lacunes-ions par les atomes de gaz rares dans le siliciumMUDRYJ, A. V; PUSHKARCHUK, A. L; UL'YASHIN, A. G et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 2, pp 360-363, issn 0015-3222Article